IXGT60N60B2 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGT60N60B2 Specs and Replacement

Type Designator: IXGT60N60B2

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 290 pF

Package: TO268

IXGT60N60B2 Substitution

- IGBT ⓘ Cross-Reference Search

IXGT60N60B2 datasheet

..1. Size:576K ixys
ixgt60n60b2.pdf pdf_icon

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) ... See More ⇒

..2. Size:578K ixys
ixgh60n60b2 ixgt60n60b2.pdf pdf_icon

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) ... See More ⇒

5.1. Size:236K ixys
ixgt60n60c3d1.pdf pdf_icon

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C C (Tab) E VGES Continuous 20 V VGEM Transient 30 V IC25 ... See More ⇒

5.2. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf pdf_icon

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒