All IGBT. IXGT60N60B2 Datasheet

 

IXGT60N60B2 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGT60N60B2

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Collector Current |Ic|, A: 75A

Rise Time, nS: 100

Package: TO268

IXGT60N60B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGT60N60B2 Datasheet (PDF)

1.1. ixgh60n60c2 ixgt60n60c2.pdf Size:583K _ixys

IXGT60N60B2
IXGT60N60B2

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25C (limited by leads) 75 A

1.2. ixgh60n60b2 ixgt60n60b2.pdf Size:578K _ixys

IXGT60N60B2
IXGT60N60B2

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) < 1.8 V Optimized for 10-25 kHz hard tfi typ = 100 ns switching and up to 100 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V

1.3. ixgh60n60 ixgk60n60 ixgt60n60.pdf Size:95K _ixys

IXGT60N60B2
IXGT60N60B2

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25C, limited by leads 75 A (IXGT) IC90 TC = 90C60 A G E ICM TC = 25C, 1 ms 200 A

1.4. ixgt60n60.pdf Size:94K _igbt_a

IXGT60N60B2
IXGT60N60B2

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 IC25 TC = 25°C, limited by leads 75 A (IXGT) IC90 TC = 90°C60 A G E ICM TC = 25°C,

1.5. ixgt60n60b2.pdf Size:576K _igbt_a

IXGT60N60B2
IXGT60N60B2

Advance Technical Data VCES = 600 V IXGH 60N60B2 HiPerFASTTM IGBT IC25 = 75 A IXGT 60N60B2 VCE(sat) < 1.8 V Optimized for 10-25 kHz hard tfi typ = 100 ns switching and up to 100 KHz resonant switching TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G E C (TAB) VGES Continuous ±20 V VGEM Trans

1.6. ixgt60n60c2.pdf Size:581K _igbt_a

IXGT60N60B2
IXGT60N60B2

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

1.7. ixgt60n60c3d1.pdf Size:236K _igbt_a

IXGT60N60B2
IXGT60N60B2

VCES = 600V GenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60A with Diode IXGT60N60C3D1 ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi (typ) = 50ns High Speed PT IGBTs for 40-100kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C C (Tab) E VGES Continuous ±20 V VGEM Transient ±30 V IC25

Datasheet: IXGT40N60C , IXGT40N60C2 , IXGT40N60C2D1 , IXGT45N120 , IXGT4N250C , IXGT50N60B2 , IXGT50N60C2 , IXGT50N90B2 , 10N40C1D , IXGT60N60C2 , IXGT60N60C3D1 , IXGT64N60A3 , IXGT64N60B3 , IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IXGT72N60B3 .

 


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