All IGBT. IXGX35N120B Datasheet

 

IXGX35N120B Datasheet and Replacement


   Type Designator: IXGX35N120B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Package: PLUS247
 

 IXGX35N120B substitution

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IXGX35N120B Datasheet (PDF)

 ..1. Size:45K  ixys
 ixgx35n120b.pdf pdf_icon

IXGX35N120B

Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

 ..2. Size:1845K  ixys
 ixgk35n120b ixgk35n120bd1 ixgx35n120b ixgx35n120bd1.pdf pdf_icon

IXGX35N120B

Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

 0.1. Size:45K  ixys
 ixgx35n120bd1.pdf pdf_icon

IXGX35N120B

Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

 4.1. Size:45K  ixys
 ixgx35n120cd1.pdf pdf_icon

IXGX35N120B

Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9

SHOW MORE

Datasheet: IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , IXGX28N140B3H1 , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 , IKW40N65WR5 , IXGX35N120BD1 , IXGX35N120C , IXGX35N120CD1 , IXGX400N30A , IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 .

History: SKM195GAR063DN | APTGT75X120TE3

Keywords - IXGX35N120B transistor datasheet

 IXGX35N120B cross reference
 IXGX35N120B equivalent finder
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