IXGX60N60B2D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGX60N60B2D1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 340 pF
Package: PLUS247
IXGX60N60B2D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGX60N60B2D1 Datasheet (PDF)
ixgx60n60b2d1.pdf
Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)
ixgk60n60b2d1 ixgx60n60b2d1.pdf
Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)
ixgx60n60c2d1.pdf
IXGK 60N60C2D1VCES = 600 VHiPerFASTTMIXGX 60N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 35 nsSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads)
ixgx64n60b3d1.pdf
VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110
Datasheet: IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 , IXGX50N60BD1 , IXGX50N60C2D1 , IXGX50N90B2D1 , IXGX55N120A3H1 , IRG4PC40UD , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 .
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