All IGBT. IXGX72N60C3H1 Datasheet

 

IXGX72N60C3H1 Datasheet and Replacement


   Type Designator: IXGX72N60C3H1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 540 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Package: PLUS247
      - IGBT Cross-Reference

 

IXGX72N60C3H1 Datasheet (PDF)

 ..1. Size:211K  ixys
 ixgx72n60c3h1.pdf pdf_icon

IXGX72N60C3H1

VCES = 600VGenX3TM 600V IGBTIXGX72N60C3H1IC110 = 72Awith DiodeVCE(sat) 2.5Vtfi(typ) = 55nsHigh-Speed PT IGBT for40-100kHz SwitchingPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGGDVGES Continuous 20 V CES TabVGEM Transient 30 VIC25 TC = 25C (Limited by L

 5.1. Size:229K  ixys
 ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

IXGX72N60C3H1

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

 5.2. Size:221K  ixys
 ixgx72n60b3h1.pdf pdf_icon

IXGX72N60C3H1

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGK72N60B3H1IC110 = 72Awith DiodeIXGX72N60B3H1VCE(sat) 1.8Vtfi(typ) = 92nsMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V (

 5.3. Size:227K  ixys
 ixgx72n60a3h1.pdf pdf_icon

IXGX72N60C3H1

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

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Datasheet: IXGX50N60C2D1 , IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , RJP63K2DPP-M0 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 .

History: HGTG40N60C3R | TGL40N120FD | APT75GN120J | APT100GT60JRDQ4 | JNG15N120AI | MSAHZ52F120A

Keywords - IXGX72N60C3H1 transistor datasheet

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