All IGBT. IXGX75N250 Datasheet

 

IXGX75N250 Datasheet and Replacement


   Type Designator: IXGX75N250
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 170 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 225 nS
   Coesⓘ - Output Capacitance, typ: 345 pF
   Qg ⓘ - Total Gate Charge, typ: 410 nC
   Package: PLUS247
 

 IXGX75N250 substitution

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IXGX75N250 Datasheet (PDF)

 ..1. Size:172K  ixys
 ixgx75n250.pdf pdf_icon

IXGX75N250

Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)

 0.1. Size:174K  ixys
 ixgk75n250-ixgx75n250.pdf pdf_icon

IXGX75N250

Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)

 9.1. Size:211K  ixys
 ixgx72n60c3h1.pdf pdf_icon

IXGX75N250

VCES = 600VGenX3TM 600V IGBTIXGX72N60C3H1IC110 = 72Awith DiodeVCE(sat) 2.5Vtfi(typ) = 55nsHigh-Speed PT IGBT for40-100kHz SwitchingPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGGDVGES Continuous 20 V CES TabVGEM Transient 30 VIC25 TC = 25C (Limited by L

 9.2. Size:229K  ixys
 ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

IXGX75N250

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE

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Datasheet: IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , FGH40N60UFD , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 .

Keywords - IXGX75N250 transistor datasheet

 IXGX75N250 cross reference
 IXGX75N250 equivalent finder
 IXGX75N250 lookup
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