IXGX75N250 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGX75N250 Specs and Replacement

Type Designator: IXGX75N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 780 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 170 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7(max) V @25℃

tr ⓘ - Rise Time, typ: 225 nS

Coesⓘ - Output Capacitance, typ: 345 pF

Package: PLUS247

IXGX75N250 Substitution

- IGBT ⓘ Cross-Reference Search

IXGX75N250 datasheet

..1. Size:172K ixys
ixgx75n250.pdf pdf_icon

Preliminary Technical Information High Voltage IGBTs VCES = 2500V IXGK75N250 IC110 = 75A IXGX75N250 For Capacitor Discharge VCE(sat) 2.7V Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXGX)... See More ⇒

0.1. Size:174K ixys
ixgk75n250-ixgx75n250.pdf pdf_icon

9.1. Size:211K ixys
ixgx72n60c3h1.pdf pdf_icon

VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode VCE(sat) 2.5V tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G G D VGES Continuous 20 V C ES Tab VGEM Transient 30 V IC25 TC = 25 C (Limited by L... See More ⇒

9.2. Size:229K ixys
ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 VCE(sat) 1.35V tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V (TAB) G VGES Continuous 20 V C E ... See More ⇒