All IGBT. IXGX82N120B3 Datasheet

 

IXGX82N120B3 Datasheet and Replacement


   Type Designator: IXGX82N120B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 230 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 77 nS
   Coesⓘ - Output Capacitance, typ: 640 pF
   Package: PLUS247
 

 IXGX82N120B3 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXGX82N120B3 Datasheet (PDF)

 ..1. Size:217K  ixys
 ixgx82n120b3.pdf pdf_icon

IXGX82N120B3

Advance Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120B3IC110 = 82AIGBTsIXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTsfor 3 - 20 kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VC(TAB)EEVGES Continuous 20 VVGEM Transient

 4.1. Size:179K  ixys
 ixgx82n120a3.pdf pdf_icon

IXGX82N120B3

Preliminary Technical InformationGenX3TM 1200V VCES = 1200VIXGK82N120A3IC110 = 82AIGBTsIXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs forup to 3kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 1200 V EEVGES Continuous 20 VVGEM Transient 3

Datasheet: IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , GT50JR22 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B .

History: IXGX120N60C2 | IXGH40N60B2D1 | F3L300R12MT4-B22 | MKI50-12F7 | SGP15N60RUF | DIM800XSM45-TS | MMG450WB120B6TC

Keywords - IXGX82N120B3 transistor datasheet

 IXGX82N120B3 cross reference
 IXGX82N120B3 equivalent finder
 IXGX82N120B3 lookup
 IXGX82N120B3 substitution
 IXGX82N120B3 replacement

 

 
Back to Top

 


 
.