IXGX82N120B3 PDF and Equivalents Search

 

IXGX82N120B3 Specs and Replacement

Type Designator: IXGX82N120B3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 230 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 77 nS

Coesⓘ - Output Capacitance, typ: 640 pF

Package: PLUS247

 IXGX82N120B3 Substitution

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IXGX82N120B3 datasheet

 ..1. Size:217K  ixys
 ixgx82n120b3.pdf pdf_icon

IXGX82N120B3

Advance Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120B3 IC110 = 82A IGBTs IXGX82N120B3 VCE(sat) 3.20V High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (TAB) E E VGES Continuous 20 V VGEM Transient... See More ⇒

 4.1. Size:179K  ixys
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IXGX82N120B3

Preliminary Technical Information GenX3TM 1200V VCES = 1200V IXGK82N120A3 IC110 = 82A IGBTs IXGX82N120A3 VCE(sat) 2.05V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V E E VGES Continuous 20 V VGEM Transient 3... See More ⇒

Specs: IXGX60N60B2D1, IXGX60N60C2D1, IXGX64N60B3D1, IXGX72N60A3H1, IXGX72N60B3H1, IXGX72N60C3H1, IXGX75N250, IXGX82N120A3, FGH40N60SFD, IXGY2N120, IXLF19N250A, IXRA15N120, STGWT40HP65FB, IXRH40N120, IXRP15N120, IXSA10N60B2D1, IXSA15N120B

Keywords - IXGX82N120B3 transistor spec

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