IXSP10N60B2D1 Specs and Replacement
Type Designator: IXSP10N60B2D1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO220
IXSP10N60B2D1 Substitution - IGBT ⓘ Cross-Reference Search
IXSP10N60B2D1 datasheet
ixsa10n60b2d1 ixsp10n60b2d1.pdf
High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP)... See More ⇒
ixsp10n60b2d1.pdf
High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP)... See More ⇒
ixsa16n60 ixsp16n60.pdf
Preliminary Data Sheet IXSA 16N60 VCES = 600V Low VCE(sat) IGBT IXSP 16N60 IC25 = 16A Short Circuit SOA Capability VCE(sat)typ = 1.8V TO-220AB(IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263AA IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25... See More ⇒
ixsp15n120b.pdf
Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (... See More ⇒
Specs: IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , FGH60N60SFD , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 .
History: IXSN80N60BD1 | IXSK80N60B | SNG40660
Keywords - IXSP10N60B2D1 transistor spec
IXSP10N60B2D1 cross reference
IXSP10N60B2D1 equivalent finder
IXSP10N60B2D1 lookup
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History: IXSN80N60BD1 | IXSK80N60B | SNG40660
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