IXSQ10N60B2D1 PDF and Equivalents Search

 

IXSQ10N60B2D1 Specs and Replacement

Type Designator: IXSQ10N60B2D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO3P

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IXSQ10N60B2D1 datasheet

 ..1. Size:610K  ixys
 ixsh10n60b2d1 ixsq10n60b2d1.pdf pdf_icon

IXSQ10N60B2D1

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110 ... See More ⇒

 ..2. Size:513K  ixys
 ixsq10n60b2d1.pdf pdf_icon

IXSQ10N60B2D1

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110 ... See More ⇒

Specs: IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IRGP4063D , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 .

History: IXSK80N60B | SNG40660

Keywords - IXSQ10N60B2D1 transistor spec

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