All IGBT. IXSQ10N60B2D1 Datasheet

 

IXSQ10N60B2D1 Datasheet and Replacement


   Type Designator: IXSQ10N60B2D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO3P
 

 IXSQ10N60B2D1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXSQ10N60B2D1 Datasheet (PDF)

 ..1. Size:610K  ixys
 ixsh10n60b2d1 ixsq10n60b2d1.pdf pdf_icon

IXSQ10N60B2D1

High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110

 ..2. Size:513K  ixys
 ixsq10n60b2d1.pdf pdf_icon

IXSQ10N60B2D1

High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110

Datasheet: IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , RJH3047 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 .

History: OST30N65KTXF

Keywords - IXSQ10N60B2D1 transistor datasheet

 IXSQ10N60B2D1 cross reference
 IXSQ10N60B2D1 equivalent finder
 IXSQ10N60B2D1 lookup
 IXSQ10N60B2D1 substitution
 IXSQ10N60B2D1 replacement

 

 
Back to Top

 


 
.