IXSQ10N60B2D1 Datasheet and Replacement
Type Designator: IXSQ10N60B2D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qgⓘ - Total Gate Charge, typ: 17 nC
Package: TO3P
- IGBT Cross-Reference
IXSQ10N60B2D1 Datasheet (PDF)
ixsh10n60b2d1 ixsq10n60b2d1.pdf
High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110
ixsq10n60b2d1.pdf
High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110
Datasheet: IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IRGP4086 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 .
History: IXGP16N60C2 | HGTG20N120E2
Keywords - IXSQ10N60B2D1 transistor datasheet
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History: IXGP16N60C2 | HGTG20N120E2
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