IXXH75N60B3D1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXXH75N60B3D1 Specs and Replacement

Type Designator: IXXH75N60B3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 75 nS

Coesⓘ - Output Capacitance, typ: 195 pF

Package: TO247

IXXH75N60B3D1 Substitution

- IGBT ⓘ Cross-Reference Search

IXXH75N60B3D1 datasheet

..1. Size:186K ixys
ixxh75n60b3d1.pdf pdf_icon

Preliminary Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60B3D1 GenX3TM w/ Diode IC110 = 75A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E ... See More ⇒

3.1. Size:167K ixys
ixxh75n60b3.pdf pdf_icon

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60B3 GenX3TM IC110 = 75A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G C VGES Continuous 20 V Tab E VGEM Transient ... See More ⇒

5.1. Size:186K ixys
ixxh75n60c3d1.pdf pdf_icon

Preliminary Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60C3D1 GenX3TM w/ Diode IC110 = 75A VCE(sat) 2.2V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E V... See More ⇒

5.2. Size:167K ixys
ixxh75n60c3.pdf pdf_icon