All IGBT. IXYH50N120C3 Datasheet

 

IXYH50N120C3 Datasheet and Replacement


   Type Designator: IXYH50N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXYH50N120C3 Datasheet (PDF)

 ..1. Size:210K  ixys
 ixyh50n120c3.pdf pdf_icon

IXYH50N120C3

1200V XPTTM IGBT VCES = 1200VIXYH50N120C3GenX3TM IC110 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 10

 0.1. Size:184K  ixys
 ixyh50n120c3d1.pdf pdf_icon

IXYH50N120C3

1200V XPTTM IGBT VCES = 1200VIXYH50N120C3D1GenX3TM w/ Diode IC100 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVG

 7.1. Size:251K  ixys
 ixyh50n65c3h1.pdf pdf_icon

IXYH50N120C3

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYH50N65C3H1GenX3TM w/ Sonic IC110 = 50ADiode VCE(sat) 2.10V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1

 7.2. Size:271K  ixys
 ixyh50n65c3.pdf pdf_icon

IXYH50N120C3

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA50N65C3GenX3TM IC110 = 50AIXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175

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Datasheet: IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IRG4PC50UD , IXYH82N120C3 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - IXYH50N120C3 transistor datasheet

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