IXYH50N120C3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYH50N120C3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Qgⓘ - Total Gate Charge, typ: 142 nC
Package: TO247
IXYH50N120C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYH50N120C3 Datasheet (PDF)
ixyh50n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYH50N120C3GenX3TM IC110 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 10
ixyh50n120c3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH50N120C3D1GenX3TM w/ Diode IC100 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVG
ixyh50n65c3h1.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYH50N65C3H1GenX3TM w/ Sonic IC110 = 50ADiode VCE(sat) 2.10V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1
ixyh50n65c3.pdf
Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA50N65C3GenX3TM IC110 = 50AIXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175
ixyh50n65c3d1.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH50N65C3D1GenX3TM w/ Diode IC110 = 50A VCE(sat) 2.10V tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M
Datasheet: IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , XNF15N60T , IXYH82N120C3 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH , MIAA10WD600TMH , MIAA10WE600TMH , MIAA10WF600TMH , MIAA15WB600TMH .
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