IGC193T120T8RM Specs and Replacement
Type Designator: IGC193T120T8RM
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Package: CHIP
IGC193T120T8RM Substitution - IGBTⓘ Cross-Reference Search
IGC193T120T8RM datasheet
igc193t120t8rm.pdf
IGC193T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC193T120T8... See More ⇒
igc19t65qe.pdf
IGC19T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching... See More ⇒
sigc19t60se.pdf
SIGC19T60SE IGBT 3 Chip Features Recommended for 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications short tail current drives positive temperature coefficient white goods easy paralleling G resonant applications E Qualified according to JEDEC for target ... See More ⇒
Specs: MITB10WB1200TMH, MITB15WB1200TMH, 2PG009, MIXA100W1200TEH, IGC27T120T6L, MIXA101W1200EH, IGC19T65QE, MIXA10W1200TMH, RJP30H2A, MIXA10W1200TML, IGC18T120T8Q, MIXA10WB1200TED, IGC18T120T8L, MIXA10WB1200TMH, MIXA10WB1200TML, IGC18T120T6L, MIXA150W1200TEH
Keywords - IGC193T120T8RM transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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