IGC193T120T8RM IGBT. Datasheet pdf. Equivalent
Type Designator: IGC193T120T8RM
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Package: CHIP
IGC193T120T8RM Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGC193T120T8RM Datasheet (PDF)
igc193t120t8rm.pdf
IGC193T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC193T120T8
igc19t65qe.pdf
IGC19T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching
sigc19t60se.pdf
SIGC19T60SE IGBT 3 Chip Features: Recommended for: 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications: short tail current drives positive temperature coefficient white goods easy parallelingG resonant applications E Qualified according to JEDEC for target
Datasheet: MITB10WB1200TMH , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , FGH60N60SMD , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , IGC18T120T6L , MIXA150W1200TEH .
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