All IGBT. IGC18T120T8Q Datasheet

 

IGC18T120T8Q IGBT. Datasheet pdf. Equivalent


   Type Designator: IGC18T120T8Q
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.42 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP

 IGC18T120T8Q Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGC18T120T8Q Datasheet (PDF)

 ..1. Size:68K  infineon
igc18t120t8q.pdf

IGC18T120T8Q
IGC18T120T8Q

IGC18T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn Die Size PackageIGC18T120T8Q 1200V 15

 3.1. Size:69K  infineon
igc18t120t8l.pdf

IGC18T120T8Q
IGC18T120T8Q

IGC18T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC18T120T8L 1200V 15A

 4.1. Size:69K  infineon
igc18t120t6l.pdf

IGC18T120T8Q
IGC18T120T8Q

IGC18T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC18T120T6L 1200V 15A 4.16 x 4.34 mm2 sawn on foil MECHANICAL

 8.1. Size:73K  infineon
sigc18t60snc.pdf

IGC18T120T8Q
IGC18T120T8Q

SIGC18T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP20N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-S2856-SIGC18T60SNC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 Q67041-S28

 8.2. Size:64K  infineon
sigc18t60nc.pdf

IGC18T120T8Q
IGC18T120T8Q

SIGC18T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4139-SIGC18T60NC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Rast

 8.3. Size:64K  infineon
sigc18t60un.pdf

IGC18T120T8Q
IGC18T120T8Q

SIGC18T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SGP20N60HS 600V NPT technology 100m chip Applications: G short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4222-SIGC18T60UN 600V

Datasheet: 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , CRG40T60AN3H , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , IGC18T120T6L , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH .

 

 
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