IGC50T120T8RL Specs and Replacement
Type Designator: IGC50T120T8RL
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.07 V @25℃
Package: CHIP
IGC50T120T8RL Substitution - IGBT ⓘ Cross-Reference Search
IGC50T120T8RL datasheet
igc50t120t8rl.pdf
IGC50T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC50T120T8RL 1200V 50... See More ⇒
igc50t120t8rq.pdf
IGC50T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology power modules C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC50T120T8RQ 1200V 50A ... See More ⇒
igc50t120t6rl.pdf
IGC50T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC50T120T6RL 1200V 50A 7.25 x 6.84 mm2 sawn on foil MECHANICA... See More ⇒
Specs: IGC13T120T6L, MIXA151W1200EH, IGC54T65T8RM, MIXA20W1200MC, IGC54T65R3QE, MIXA20W1200TMH, IGC50T120T8RQ, MIXA20W1200TML, IRG7IC28U, MIXA20WB1200TED, IGC50T120T6RL, MIXA20WB1200TMH, IGC41T120T8Q, MIXA20WB1200TML, IGC39T65T8M, MIXA30W1200TED, IGC39T65QE
Keywords - IGC50T120T8RL transistor spec
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History: MII400-12E4 | MG75Q1BS11
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