All IGBT. IGC36T120T6L Datasheet

 

IGC36T120T6L Datasheet and Replacement


   Type Designator: IGC36T120T6L
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 155 pF
   Package: CHIP
 

 IGC36T120T6L substitution

   - IGBT ⓘ Cross-Reference Search

 

IGC36T120T6L Datasheet (PDF)

 ..1. Size:69K  infineon
 igc36t120t6l.pdf pdf_icon

IGC36T120T6L

IGC36T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC36T120T6L 1200V 35A 6.36 x 5.67 mm2 sawn on foil MECHANICAL

 4.1. Size:65K  infineon
 igc36t120t8l.pdf pdf_icon

IGC36T120T6L

IGC36T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC36T120T8L 1200V 35A

Datasheet: IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , GT30F131 , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL .

History: DGP15N60CTL | NCE75TD120WT | CM200DU-24F | MWI80-12T6K | DL2G100SH6A | APTGF150DU120T | IGC04R60DE

Keywords - IGC36T120T6L transistor datasheet

 IGC36T120T6L cross reference
 IGC36T120T6L equivalent finder
 IGC36T120T6L lookup
 IGC36T120T6L substitution
 IGC36T120T6L replacement

 

 
Back to Top

 


 
.