IGC99T120T6RM PDF and Equivalents Search

 

IGC99T120T6RM Specs and Replacement


   Type Designator: IGC99T120T6RM
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Coesⓘ - Output Capacitance, typ: 405 pF
   Package: CHIP
 

 IGC99T120T6RM Substitution

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IGC99T120T6RM datasheet

 ..1. Size:71K  infineon
igc99t120t6rm.pdf pdf_icon

IGC99T120T6RM

IGC99T120T6RM IGBT4 Medium Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses medium power modules soft turn off positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 sawn on foil... See More ⇒

 2.1. Size:71K  infineon
igc99t120t6rh.pdf pdf_icon

IGC99T120T6RM

IGC99T120T6RH IGBT4 High Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RH 1200V 100A 10.39 x 9.5 mm2 sawn o... See More ⇒

 2.2. Size:71K  infineon
igc99t120t6rl.pdf pdf_icon

IGC99T120T6RM

IGC99T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2 sawn on foil MECHANIC... See More ⇒

 4.1. Size:67K  infineon
igc99t120t8rl.pdf pdf_icon

IGC99T120T6RM

IGC99T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC99T120T8RL 1200V 10... See More ⇒

Specs: IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IRGP4066D , MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH .

Keywords - IGC99T120T6RM transistor spec

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