All IGBT. MMIX4G20N250 Datasheet

 

MMIX4G20N250 IGBT. Datasheet pdf. Equivalent


   Type Designator: MMIX4G20N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 160 nS
   Coesⓘ - Output Capacitance, typ: 53 pF
   Qgⓘ - Total Gate Charge, typ: 53 nC
   Package: PLASTIC-24PIN

 MMIX4G20N250 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMIX4G20N250 Datasheet (PDF)

 ..1. Size:244K  ixys
 mmix4g20n250.pdf

MMIX4G20N250 MMIX4G20N250

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX4G20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1VC1 C2Q1 Q2( Electrically Isolated Tab)G2G1E2C4E1C3Q3 Q4 C2H-Bridge ConfigurationG2G4E2C4G3E3E4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TJ = 25C to 150C 2500 VVCGR T

 9.1. Size:247K  ixys
 mmix4b20n300.pdf

MMIX4G20N250 MMIX4G20N250

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS TransistorC2C1 VCE(sat) 3.2V G1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4G4E3E4C1Symbol Test Conditions Maximum RatingsG1VCES TC = 25C to 150C 3000 VE1C3VCGR TJ = 25C to 150C

 9.2. Size:245K  ixys
 mmix4b22n300.pdf

MMIX4G20N250 MMIX4G20N250

Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000

 9.3. Size:252K  ixys
 mmix4b12n300.pdf

MMIX4G20N250 MMIX4G20N250

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG

Datasheet: MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K , MMIX1G320N60B3 , MMIX1G75N250 , IKW40T120 , MUBW100-06A8 , MUBW10-06A6K , MUBW10-06A7 , MUBW10-12A7 , MUBW15-06A6K , MUBW15-06A7 , MUBW15-12A6K , MUBW15-12A7 .

 

 
Back to Top