All IGBT. GT10J311 Datasheet

 

GT10J311 IGBT. Datasheet pdf. Equivalent

Type Designator: GT10J311

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 80

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 300

Package: DPAK

GT10J311 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT10J311 Datasheet (PDF)

8.1. gt10j321.pdf Size:223K _toshiba

GT10J311
GT10J311

GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.03 μs (typ.) • Low switching loss : Eon = 0.26 mJ (typ.) : Eoff = 0.18 mJ

8.2. gt10j303.pdf Size:492K _toshiba

GT10J311
GT10J311

GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) (IC = 10A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

 8.3. gt10j301.pdf Size:493K _toshiba

GT10J311
GT10J311

GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHAR

Datasheet: GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT30J301 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 .

 

 
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