GT10J311 PDF and Equivalents Search

GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SY... See More ⇒

GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHAR... See More ⇒

GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.03 s (typ.) Low switching loss Eon = 0.26 mJ (typ.) Eoff = 0.18 mJ... See More ⇒

GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) (IC = 10A) Low saturation voltage VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI... See More ⇒