GT15J101 Datasheet. Specs and Replacement

Type Designator: GT15J101  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: TO3P

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GT15J101 datasheet

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GT15J101

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) (IC = 15A) Low saturation voltage VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI... See More ⇒

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GT15J101

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed tf = 0.03 s (typ.) Low saturation Voltage VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Absolu... See More ⇒

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Specs: GA75TS120U, GA75TS60U, GT10G101, GT10J301, GT10J311, GT10Q301, GT10Q311, GT15G101, FGH40N60UFD, GT15J102, GT15J103, GT15N101, GT15Q101, GT15Q301, GT15Q311, GT20D101, GT20D101O

Keywords - GT15J101 transistor spec

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