All IGBT. GT15J101 Datasheet

 

GT15J101 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15J101

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 600

Maximum Collector Capacity (Cc), pF: 1100pF

Package: TOP3

GT15J101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT15J101 Datasheet (PDF)

9.1. gt15j301.pdf Size:512K _toshiba

GT15J101
GT15J101

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

9.2. gt15j321.pdf Size:214K _toshiba

GT15J101
GT15J101

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector Absolu

Datasheet: GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , FGPF4633 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O .

 

 
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