STGP14NC60KD Datasheet and Replacement

STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction res ies31susceptibility) D2 PAK3 Very soft ultrafast recovery antiparallel diode 21 Short-circuit withstand time 10 s TO-220FPTABApplications H

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

STGB14NC60KDSTGF14NC60KD, STGP14NC60KD14 A, 600 V - short-circuit rugged IGBTFeaturesTAB TAB2 Short circuit withstand time 10s. Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 3121susceptibility)DPAKTO-220 Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode321App

STGB19NC60HDT4, STGF19NC60HD,STGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with ultrafast diodeDatasheet - production dataFeaturesTAB Low on-voltage drop (VCE(sat)) Very soft ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220FPTAB High frequency motor drives SMPS and PFC in both hard switch and resonant topologies32 3

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

STGB10H60DF, STGF10H60DF, STGP10H60DFTrench gate field-stop IGBT, H series 600 V, 10 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont

STGP10NB60SN-CHANNEL 10A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP10NB60S 600 V

STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction RES IES31susceptibility) D2 PAK3 Short-circuit withstand time 10 s 21 IGBT co-packaged with ultrafast free-TO-220FPTABwheeling diode Applications

STGB19NC60HD, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) Very soft ultra fast recovery anti-parallel diode33211DPAKApplicationsTO-220 High frequency motor controls SMPS and PFC in both hard switch and resonant topologies33221 1DescriptionTO-247TO-220FPThis IGBT utilize

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGB15H60DF, STGF15H60DF, STGP15H60DFTrench gate field-stop IGBT, H series 600 V, 15 A high speedDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution31 Safe parallelingDPAK Low thermal resistanceTAB Short-circuit rated Ultrafast soft recovery antiparallel diodeApplications332211 Motor cont

STGF19NC60SDSTGP19NC60SD20 A, 600 V fast IGBT with Ultrafast diodeFeatures Very low on-voltage drop (VCE(sat))TAB Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies.332211 IGBT co-packaged with Ultrafast freewheeling TO-220FPdiodeTO-220ApplicationMedium frequency motor drivesDescription

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

STGP10NC60HN-channel 10A - 600V - TO-220Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGP10NC60H 600V

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGF100N30STGP100N30, STGW100N3090 A - 330 V - fast IGBTFeatures Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 32 21 Peak collector current IRP = 330 A @ 1TC = 25 C (see Table 2)TO-220FPTO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

STGP12NB60HN-CHANNEL 12A - 600V - TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP12NB60H 600 V

STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) CTAB Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance 3 Soft and very fast

STGB19NC60H, STGP19NC60HSTGW19NC60H19 A - 600 V - very fast IGBTFeatures Low on-voltage drop (VCE(sat)) High frequency operation321Applications3TO-2472 High frequency motor drives 1 SMPS and PFC in both hard switch and TO-220resonant topologies31DPAKDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGB19NC60SSTGP19NC60S20 A, 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switchingTABTAB Optimized performance for medium operating frequencies.3132Application1D2PAKTO-220Medium frequency motor drivesDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent t

STGW19NC60WDSTGP19NC60WDN-channel 600V - 19A - TO-220 - TO-247Ultra fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType@100C(max)@25CSTGP19NC60WD 600V

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

STGF19NC60SDSTGP19NC60SD20 A, 600 V fast IGBT with Ultrafast diodeFeatures Very low on-voltage drop (VCE(sat))TAB Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies.332211 IGBT co-packaged with Ultrafast freewheeling TO-220FPdiodeTO-220ApplicationMedium frequency motor drivesDescription

STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

STGB15H60DF, STGF15H60DF, STGP15H60DFDatasheetTrench gate field-stop IGBT, H series 600 V, 14 A high speedFeaturesTAB High speed switching31 Tight parameters distribution2D PAK321 Safe parallelingTO-220FPTAB Low thermal resistance Short-circuit rated32 Ultrafast soft recovery antiparallel diode1TO-220C(2, TAB) Applications Mo

STGP10NB60SFPN-CHANNEL 10A - 600V - TO-220FPPowerMesh IGBTTYPE VCES VCE(sat) ICSTGP10NB60SFP 600

STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.

STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot

STGF10NB60SDSTGP10NB60SD16 A, 600 V, low drop IGBT with soft and fast recovery diodeFeatures Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diodeApplications3 32211 Light dimmer Static relaysTO-220FPTO-220 Motor driveDescriptionThis IGBT utilizes the advanced Power MESH Figure 1.

STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

STGB19NC60HDT4, STGF19NC60HDSTGP19NC60HD, STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode331 21ApplicationsDPAKTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-247

STGB19NC60WSTGP19NC60W, STGW19NC60W19 A - 600 V - ultra fast IGBTFeatures High frequency operation Low CRES / CIES ratio (no cross-conduction susceptibility)3132Applications1D2PAK High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and 32resonant topologies 1TO-220DescriptionThis IGBT utilizes the advanc

STGP10NB60SSTGP10NB60SFP- STGB10NB60SN-CHANNEL 10A - 600V - TO-220/TO-220FP/DPAKPowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGP10NB60S 600 V

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

STGB10NB37LZSTGP10NB37LZ10 A - 410 V internally clamped IGBTFeatures Low threshold voltage Low on-voltage dropTABTAB Low gate charge High current capability3 High voltage clamping feature3 121TO-220 DPAKApplications Automotive ignitionDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off

STGP12NB60HDN-CHANNEL 12A - 600V TO-220PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP12NB60HD 600 V

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

STGB19NC60SSTGP19NC60S20 A, 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switchingTAB Optimized performance for medium operating frequencies.33121ApplicationD2PAKTO-220 Medium frequency motor drivesDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent tr