All IGBT. GT15J103 Datasheet

 

GT15J103 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15J103

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 70

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 350

Package: DPAK

GT15J103 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT15J103 Datasheet (PDF)

9.1. gt15j301.pdf Size:512K _toshiba

GT15J103 GT15J103

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

9.2. gt15j321.pdf Size:214K _toshiba

GT15J103 GT15J103

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector Absolu

Datasheet: GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , IRG7IC28U , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 .

 

 
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