All IGBT. GT15N101 Datasheet

 

GT15N101 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15N101

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 1000

Package: TOP3

GT15N101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT15N101 Datasheet (PDF)

8.1. ixgt15n120b2d1.pdf Size:66K _ixys

GT15N101 GT15N101

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V (IXGH) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G TAB C

8.2. ixgt15n120b.pdf Size:170K _ixys

GT15N101 GT15N101

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

 8.3. ixgt15n120cd1.pdf Size:60K _ixys

GT15N101 GT15N101

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

8.4. ixgt15n120c.pdf Size:52K _ixys

GT15N101 GT15N101

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V E VGEM Transient ±30 V (TAB) IC25 TC = 25°C30 A IC90 TC = 90°C15 A TO-247 AD (IXGH) ICM TC =

 8.5. ixgh15n120b ixgt15n120b.pdf Size:529K _ixys

GT15N101 GT15N101

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

8.6. ixgt15n120bd1.pdf Size:60K _ixys

GT15N101 GT15N101

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

8.7. kgt15n120ndh.pdf Size:1475K _kec

GT15N101 GT15N101

SEMICONDUCTOR KGT15N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·Extremely enhanced avalanche capability MAXIMUM RAT

8.8. kgt15n120kda.pdf Size:1565K _kec

GT15N101 GT15N101

SEMICONDUCTOR KGT15N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High system efficiency ·Short Circuit Withstand Times ⋎10us ·Extremely en

8.9. kgt15n135ndh.pdf Size:1600K _kec

GT15N101 GT15N101

SEMICONDUCTOR KGT15N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. _ + _ + _ + _ + FEATURES _ + ·High speed switching _ + _ + ·High system efficiency _ + _ + ·Soft current turn-off waveforms _

8.10. kgt15n120nda.pdf Size:100K _kec

GT15N101 GT15N101

SEMICONDUCTOR KGT15N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + FEATURES _ d + 1.00 0.20 ·High spee

8.11. kgt15n135kdh.pdf Size:1558K _kec

GT15N101 GT15N101

SEMICONDUCTOR KGT15N135KDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Soft current turn-off waveforms ·Extremely enhanced avalanche c

8.12. kgt15n120nds.pdf Size:1466K _kec

GT15N101 GT15N101

SEMICONDUCTOR KGT15N120NDS TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·Extremely enhanced avalanche capability MAXIMUM RAT

Datasheet: GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , G20N60B3D , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 .

 

 
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