GT15N101 IGBT. Datasheet pdf. Equivalent
Type Designator: GT15N101
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Collector-Emitter saturation Voltage |Vcesat|, V: 4
Maximum Collector Current |Ic|, A: 15
Maximum Junction Temperature (Tj), °C: 150
Package: TOP3
GT15N101 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT15N101 IGBT. Datasheet pdf. Equivalent
Type Designator: GT15N101
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 1000
Collector-Emitter saturation Voltage |Vcesat|, V: 4
Maximum Collector Current |Ic|, A: 15
Maximum Junction Temperature (Tj), °C: 150
Package: TOP3
GT15N101 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT15N101 Datasheet (PDF)
7.1. gt15n10s.pdf 
Size:587K _goford
GOFORD GT15N10SN-Channel Enhancement Mode Power MOSFETDescriptionThe GT15N10S uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 10A RDS(ON) (at VGS = 10V)
8.1. ixgt15n120b2d1.pdf Size:66K _ixys
Advance Technical InformationVCES =1200 VIXGH15N120B2D1HiPerFASTTM IGBTIC25 = 30 AIXGT15N120B2D1VCE(sat) = 3.3 VOptimized for 10-20 KHz hardtfi(typ) = 137 nsswitching and up to 100 KHzresonant switchingSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 V(IXGH)VCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGTABC
8.2. ixgt15n120b.pdf Size:170K _ixys
IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A
8.3. ixgt15n120cd1.pdf Size:60K _ixys
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2
8.4. ixgt15n120c.pdf Size:52K _ixys
IXGH 15N120C VCES = 1200 VIGBTIXGT 15N120C IC25 = 30 AVCE(sat) = 3.8 VLightspeed Seriestfi(typ) = 115 nsPreliminary dataSymbol Test Conditions Maximum RatingsTO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 VEVGEM Transient 30 V(TAB)IC25 TC = 25C30 AIC90 TC = 90C15 ATO-247 AD (IXGH)ICM TC =
8.5. ixgh15n120b ixgt15n120b.pdf Size:529K _ixys
IXGH 15N120B VCES = 1200 VHiPerFASTTM IGBTIXGT 15N120B IC25 = 30 AVCE(sat) = 3.2 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C30 ATO-247 AD (IXGH)IC110 TC = 110C15 AICM TC = 25C, 1 ms 60 A
8.6. ixgt15n120bd1.pdf Size:60K _ixys
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat)High Speed IGBT with DiodeIXGH/IXGT 15N120BD11200 V 30 A 3.2 VIXGH/IXGT 15N120CD11200 V 30 A 3.8 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247AD(IXGH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VGVGES Continuous 20 V CETABVGEM Transient 30 VIC25 TC = 25C30 ATO-2
8.7. kgt15n120ndh.pdf Size:1475K _kec
SEMICONDUCTORKGT15N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
8.8. kgt15n120kda.pdf Size:1565K _kec
SEMICONDUCTORKGT15N120KDATECHNICAL DATAGeneral DescriptionKEC NPT Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely en
8.9. kgt15n135ndh.pdf Size:1600K _kec
SEMICONDUCTORKGT15N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc. _+_+_+_+FEATURES _+High speed switching _+_+High system efficiency_+_+Soft current turn-off waveforms_
8.10. kgt15n120nda.pdf Size:100K _kec
SEMICONDUCTORKGT15N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc. _A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20+FEATURES _d +1.00 0.20High spee
8.11. kgt15n135kdh.pdf Size:1558K _kec
SEMICONDUCTORKGT15N135KDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c
8.12. kgt15n120nds.pdf Size:1466K _kec
SEMICONDUCTORKGT15N120NDSTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
Datasheet: GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , G20N60B3D , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 .
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