GT15Q301 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

GT15Q301 Specs and Replacement

Type Designator: GT15Q301

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 170 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: TO3P

GT15Q301 Substitution

- IGBT ⓘ Cross-Reference Search

GT15Q301 datasheet

..1. Size:480K toshiba
gt15q301.pdf pdf_icon

GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 C) Cha... See More ⇒

8.1. Size:254K toshiba
gt15q311.pdf pdf_icon

GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25 C) Char... See More ⇒

9.1. Size:189K 1
gt15q102.pdf pdf_icon

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit mm Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V ... See More ⇒

9.2. Size:220K toshiba
gt15q101.pdf pdf_icon