All IGBT. STGW60H65F Datasheet

 

STGW60H65F IGBT. Datasheet pdf. Equivalent


   Type Designator: STGW60H65F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 360 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Package: TO247

 STGW60H65F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGW60H65F Datasheet (PDF)

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stgw60h65f.pdf

STGW60H65F
STGW60H65F

STGW60H65F STGWT60H65F60 A, 650 V field stop trench gate IGBTDatasheet - production dataFeatures High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time3322 Lead free package1 1ApplicationsTO-247TO-3P Photovoltaic inverters Uninterruptible power supply Weldin

 0.1. Size:1229K  st
stgw60h65fb.pdf

STGW60H65F
STGW60H65F

STGW60H65FB STGWT60H65FBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution332 Safe paralleling211 Low thermal resistanceTO-247

 5.1. Size:1574K  st
stgw60h65dfb.pdf

STGW60H65F
STGW60H65F

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling

 5.2. Size:685K  st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf

STGW60H65F
STGW60H65F

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral

 5.3. Size:2061K  st
stgw60h65drf.pdf

STGW60H65F
STGW60H65F

STGW60H65DRF60 A, 650 V field stop trench gate IGBT with Ultrafast diodeDatasheet - production dataApplications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters321DescriptionTO-247This device is an IGBT developed using an advanced proprietary trench gate and field stop structure

 5.4. Size:1920K  st
stgw60h65df.pdf

STGW60H65F
STGW60H65F

STGW60H65DF60 A, 650 V field stop trench gate IGBT with very fast diodeDatasheet - production dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time32 Very fast soft recovery antiparallel diode1 Lead free packageTO-247Applications Photovoltaic inverters

Datasheet: STGW45HF60WD , STGW45HF60WDI , STGW45NC60VD , STGW45NC60WD , STGW50H60DF , STGW50HF60S , STGW50HF60SD , STGW50NC60W , IRGB20B60PD1 , STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 .

 

 
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