STGY40NC60VD Specs and Replacement
Type Designator: STGY40NC60VD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 350 pF
Package: MAX247 STGY40NC60VD Substitution - IGBT ⓘ Cross-Reference Search
STGY40NC60VD datasheet
stgy40nc60vd.pdf
STGY40NC60VD N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT Features VCE(sat) IC VCES Type (max)@25 C @100 C STGY40NC60VD 600V ... See More ⇒
Specs: STGW50HF60S , STGW50HF60SD , STGW50NC60W , STGW60H65F , STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , IRG4PF50W , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T .
History: MBQ60T65PES | IKB10N60T | IKW15T120
Keywords - STGY40NC60VD transistor spec
STGY40NC60VD cross reference
STGY40NC60VD equivalent finder
STGY40NC60VD lookup
STGY40NC60VD substitution
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History: MBQ60T65PES | IKB10N60T | IKW15T120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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