STGY40NC60VD Datasheet and Replacement
Type Designator: STGY40NC60VD
Type: IGBT + Anti-Parallel Diode
Marking Code: GY40NC60VD
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.75 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 350 pF
Qg ⓘ - Total Gate Charge, typ: 214 nC
Package: MAX247
STGY40NC60VD substitution
STGY40NC60VD Datasheet (PDF)
stgy40nc60vd.pdf
STGY40NC60VDN-channel 600V - 50A - Max247Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(max)@25C @100CSTGY40NC60VD 600V
Datasheet: STGW50HF60S , STGW50HF60SD , STGW50NC60W , STGW60H65F , STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , GT60N321 , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T .
History: RJH60M3DPQ-A0
Keywords - STGY40NC60VD transistor datasheet
STGY40NC60VD cross reference
STGY40NC60VD equivalent finder
STGY40NC60VD lookup
STGY40NC60VD substitution
STGY40NC60VD replacement
History: RJH60M3DPQ-A0
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