IKA10N60T IGBT. Datasheet pdf. Equivalent
Type Designator: IKA10N60T
Type: IGBT + Anti-Parallel Diode
Marking Code: K10T60
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 8 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Qgⓘ - Total Gate Charge, typ: 62 nC
Package: TO220F
IKA10N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKA10N60T Datasheet (PDF)
ika10n60t.pdf
IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - U
ika10n60trev2 3g.pdf
IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh
ika10n65et6.pdf
IKA10N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg
Datasheet: IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , SGT60U65FD1PT , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T .
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