IKB10N60T Datasheet. Specs and Replacement

Type Designator: IKB10N60T  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 110 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 24 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 8 nS

Coesⓘ - Output Capacitance, typ: 40 pF

Package: TO263

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IKB10N60T datasheet

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IKB10N60T

IKB10N60T TRENCHSTOP Series p Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum G ... See More ⇒

 0.1. Size:1185K  infineon
 ikb10n60trev2 3g.pdf pdf_icon

IKB10N60T

IKB10N60T TrenchStop Series p Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners Trenc... See More ⇒

Specs: IKW08T120, SKW30N60HS, IKW15T120, IKW25T120, IKW40T120, IKA06N60T, IKB06N60T, IKA10N60T, IKW40N120H3, IKA15N60T, IKB15N60T, IKB20N60T, IKW20N60T, IKW30N60T, SL50T120FZ, IKW75N60T, SKB02N120

Keywords - IKB10N60T transistor spec

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