GT20D101O PDF and Equivalents Search

 

GT20D101O Specs and Replacement

Type Designator: GT20D101O

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 180 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

Coesⓘ - Output Capacitance, typ: 400 pF

Package: TO247

 GT20D101O Substitution

- IGBT ⓘ Cross-Reference Search

 

GT20D101O datasheet

 ..1. Size:73K  toshiba
 gt20d101o gt20d101y.pdf pdf_icon

GT20D101O

... See More ⇒

 6.1. Size:187K  toshiba
 gt20d101.pdf pdf_icon

GT20D101O

... See More ⇒

 9.1. Size:165K  toshiba
 gt20d201.pdf pdf_icon

GT20D101O

... See More ⇒

Specs: GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , IXGH60N60 , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 .

Keywords - GT20D101O transistor spec

 GT20D101O cross reference
 GT20D101O equivalent finder
 GT20D101O lookup
 GT20D101O substitution
 GT20D101O replacement

 

 

 

 

↑ Back to Top
.