IKW75N60T Datasheet. Specs and Replacement

Type Designator: IKW75N60T  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 288 pF

Package: TO247

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IKW75N60T datasheet

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IKW75N60T

IKW75N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Positive temperature coefficient in VCE(sat) E very tight parameter distribution high rugg... See More ⇒

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IKW75N60T

IKW75N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg... See More ⇒

 0.2. Size:964K  infineon
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IKW75N60T

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IKW75N60T

AIKW75N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor... See More ⇒

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Specs: IKA10N60T, IKB10N60T, IKA15N60T, IKB15N60T, IKB20N60T, IKW20N60T, IKW30N60T, SL50T120FZ, CRG60T60AN3H, SKB02N120, SKW07N120, SKW15N120, SKW25N120, SKB02N60, SKB04N60, SKA06N60, SKB06N60

Keywords - IKW75N60T transistor spec

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