IKW75N60T IGBT. Datasheet pdf. Equivalent
Type Designator: IKW75N60T
Type: IGBT + Anti-Parallel Diode
Marking Code: K75T60
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 428
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 36
Collector Capacity (Cc), typ, pF: 288
Total Gate Charge (Qg), typ, nC: 470
Package: TO247
IKW75N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW75N60T Datasheet (PDF)
ikw75n60t.pdf
IKW75N60TTRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeC Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5sG Positive temperature coefficient in VCE(sat)E very tight parameter distribution high rugg
ikw75n60trev2 6g.pdf
IKW75N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg
ikw75n60ta.pdf
IKW75N60TA TRENCHSTOPTM Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CGE Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5
aikw75n60ct.pdf
AIKW75N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
ikw75n60h3.pdf
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very lo
Datasheet: IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , FGH40N60UFD , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 .
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