IHD10N60RA IGBT. Datasheet pdf. Equivalent
Type Designator: IHD10N60RA
Type: IGBT + Anti-Parallel Diode
Marking Code: H10R60A
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 110 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 40 pF
Qgⓘ - Total Gate Charge, typ: 62 nC
Package: TO252
IHD10N60RA Transistor Equivalent Substitute - IGBT Cross-Reference Search
IHD10N60RA Datasheet (PDF)
ihd10n60ra.pdf
IGBTReverse conducting IGBT with monolithic body diodeIHD10N60RA600V Soft Switching SeriesQualified to automotive standard AECQ101Data sheetIndustrial Power ControlIHD10N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM t
ihd10n60ra 1 4.pdf
IHD10N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos
aihd10n60r.pdf
AIHD10N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution
Datasheet: IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , GT30F126 , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A .
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