IHD10N60RA Specs and Replacement
Type Designator: IHD10N60RA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 110 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Coesⓘ - Output Capacitance, typ: 40 pF
Package: TO252
IHD10N60RA Substitution - IGBT ⓘ Cross-Reference Search
IHD10N60RA datasheet
ihd10n60ra.pdf
IGBT Reverse conducting IGBT with monolithic body diode IHD10N60RA 600V Soft Switching Series Qualified to automotive standard AECQ101 Data sheet Industrial Power Control IHD10N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM t... See More ⇒
ihd10n60ra 1 4.pdf
IHD10N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to pos... See More ⇒
aihd10n60r.pdf
AIHD10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering Optimised V and V for low conduction losses CEsat F G Smooth switching performance leading to low EMI levels E Very tight parameter distribution ... See More ⇒
Specs: IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , IHW25N120R2 , IHW20N135R5 , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A .
Keywords - IHD10N60RA transistor spec
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