GT20J301 IGBT. Datasheet pdf. Equivalent
Type Designator: GT20J301
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 130W
Maximum Collector-Emitter Voltage |Vce|, V: 600V
Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V
Maximum Collector Current |Ic|, A: 20A
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 300
Package: TOP3
GT20J301 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT20J301 PDF doc:
4.1. gt20j321_en_wm_20061101.pdf 
Size:216K _toshiba
GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Unit: mm Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 ?s (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) • Low
Datasheet: GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , IRG4PC50UD , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 .
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