SKP02N60 Datasheet and Replacement
Type Designator: SKP02N60
Type: IGBT + Anti-Parallel Diode
Marking Code: K06N60
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 13 nS
Coesⓘ - Output Capacitance, typ: 18 pF
Qg ⓘ - Total Gate Charge, typ: 14 nC
Package: TO220
SKP02N60 substitution
SKP02N60 Datasheet (PDF)
skp02n60.pdf
SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggednes
skp02n120.pdf
SKP02N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeAllowed number of short circuits: 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter- SMPS NPT-Technology offers:PG-TO-220-3-1- very tig
Datasheet: IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , IKW50N60H3 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 .
History: FGB20N60SFD
Keywords - SKP02N60 transistor datasheet
SKP02N60 cross reference
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SKP02N60 substitution
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History: FGB20N60SFD
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