SKP02N60 Datasheet. Specs and Replacement

Type Designator: SKP02N60  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 18 pF

Package: TO220

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SKP02N60 datasheet

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SKP02N60

SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggednes... See More ⇒

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skp02n120.pdf pdf_icon

SKP02N60

SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits 1s. 40lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter - SMPS NPT-Technology offers PG-TO-220-3-1 - very tig... See More ⇒

Specs: IKI04N60T, IHW20N120R3, IHW15N120R3, IKP04N60T, IKP06N60T, IKP10N60T, IKP15N60T, IKP20N60T, SGH80N60UFD, SKP04N60, SKP06N60, SKP10N60A, SKP15N60, IKP01N120H2, IKP03N120H2, SKP02N120, IHY15N120R3

Keywords - SKP02N60 transistor spec

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