GT25J101 Datasheet and Replacement
Type Designator: GT25J101
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: TO3P
- IGBT Cross-Reference
GT25J101 Datasheet (PDF)
Datasheet: GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , IHW20N120R3 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - GT25J101 transistor datasheet
GT25J101 cross reference
GT25J101 equivalent finder
GT25J101 lookup
GT25J101 substitution
GT25J101 replacement
History: NCE30TD60BP | FD200R12PT4_B6
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