GT25J101 Specs and Replacement
Type Designator: GT25J101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Package: TO3P
GT25J101 Substitution - IGBT ⓘ Cross-Reference Search
GT25J101 datasheet
Specs: GT20D101Y, GT20G101, GT20G102, GT20J301, GT20J311, GT25G101, GT25G102, GT25H101, RJP30H1DPD, GT25Q101, GT25Q301, GT30J301, GT30J311, GT30J322, GT40M101, GT40M301, GT40T301
Keywords - GT25J101 transistor spec
GT25J101 cross reference
GT25J101 equivalent finder
GT25J101 lookup
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GT25J101 replacement
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