All IGBT. GT25J101 Datasheet

 

GT25J101 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT25J101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO3P

 GT25J101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT25J101 Datasheet (PDF)

 ..1. Size:225K  toshiba
gt25j101.pdf

GT25J101
GT25J101

Datasheet: GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , RJP63F3DPP-M0 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 .

 

 
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