All IGBT. GT25Q101 Datasheet

 

GT25Q101 Datasheet and Replacement


   Type Designator: GT25Q101
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 200 nS
   Package: TO264
 

 GT25Q101 substitution

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GT25Q101 Datasheet (PDF)

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GT25Q101

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GT25Q101

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25

Datasheet: GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , IRG7IC28U , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 .

Keywords - GT25Q101 transistor datasheet

 GT25Q101 cross reference
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