GT25Q101 PDF and Equivalents Search

 

GT25Q101 PDF Specs and Replacement


   Type Designator: GT25Q101
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 25 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   tr ⓘ - Rise Time, typ: 200 nS
   Package: TO264
 

 GT25Q101 Substitution

   - IGBT ⓘ Cross-Reference Search

 

GT25Q101 PDF specs

 ..1. Size:225K  toshiba
 gt25q101.pdf pdf_icon

GT25Q101

... See More ⇒

 9.1. Size:175K  toshiba
 gt25q301.pdf pdf_icon

GT25Q101

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 ... See More ⇒

Specs: GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , BT40T60ANF , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 .

History: CM600DU-24NFH

Keywords - GT25Q101 transistor spec

 GT25Q101 cross reference
 GT25Q101 equivalent finder
 GT25Q101 lookup
 GT25Q101 substitution
 GT25Q101 replacement

 

 
Back to Top

 


 
.