SGW30N60 IGBT. Datasheet pdf. Equivalent
Type Designator: SGW30N60
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 41 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 34 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO247
SGW30N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGW30N60 Datasheet (PDF)
sgw30n60.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp30n60 sgw30n60 rev2 5g.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp30n60 sgw30n60 rev2.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp30n60 sgw30n60.pdf
SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc
sgp30n60hs sgw30n60hs rev2.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgp30n60hs sgw30n60hs rev2 4g.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
sgw30n60hs.pdf
SGP30N60HS SGW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribut
Datasheet: SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , RJP30H2A , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 .
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