All IGBT. SGW30N60 Datasheet

 

SGW30N60 Datasheet and Replacement


   Type Designator: SGW30N60
   Type: IGBT
   Marking Code: G30N60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 34 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 140 nC
   Package: TO247
      - IGBT Cross-Reference

 

SGW30N60 Datasheet (PDF)

 ..1. Size:384K  infineon
 sgw30n60.pdf pdf_icon

SGW30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..2. Size:361K  infineon
 sgp30n60 sgw30n60 rev2 5g.pdf pdf_icon

SGW30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..3. Size:345K  infineon
 sgp30n60 sgw30n60 rev2.pdf pdf_icon

SGW30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 ..4. Size:330K  infineon
 sgp30n60 sgw30n60.pdf pdf_icon

SGW30N60

SGP30N60 SGW30N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switc

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Datasheet: SGB10N60A , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , FGPF4536 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGI02N120 , SGP02N120 .

History: JT075N120GPED | MMIX1Y100N120C3H1 | SKM40GD124D

Keywords - SGW30N60 transistor datasheet

 SGW30N60 cross reference
 SGW30N60 equivalent finder
 SGW30N60 lookup
 SGW30N60 substitution
 SGW30N60 replacement

 

 
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