SGP20N60HS IGBT. Datasheet pdf. Equivalent
Type Designator: SGP20N60HS
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 36 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Package: TO220
SGP20N60HS Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGP20N60HS Datasheet (PDF)
sgp20n60hs sgw20n60hs rev2 5g.pdf
SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri
sgp20n60hs.pdf
SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri
sgp20n60hs sgw20n60hs rev2.pdf
SGP20N60HS SGW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distri
sgp20n60ruf.pdf
N-CHANNEL IGBT SGP20N60RUFFEATURESTO-220* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=20A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCE
sgp20n60 sgw20n60.pdf
SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp20n60.pdf
SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp20n60 sgw20n60 rev2 4g.pdf
SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgp20n60 sgw20n60 rev2.pdf
SGP20N60 SGW20N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
Datasheet: SGI02N120 , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , RJH30E2DPP , SGP30N60HS , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 .
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