IGW08T120 Specs and Replacement
Type Designator: IGW08T120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 16 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 36 pF
Package: TO247
IGW08T120 Substitution - IGBT ⓘ Cross-Reference Search
IGW08T120 datasheet
Specs: IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , GT45F122 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 .
Keywords - IGW08T120 transistor spec
IGW08T120 cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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