IGW08T120 Datasheet and Replacement
Type Designator: IGW08T120
Type: IGBT
Marking Code: G08T120
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 16 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 36 pF
Qg ⓘ - Total Gate Charge, typ: 53 nC
Package: TO247
IGW08T120 substitution
IGW08T120 Datasheet (PDF)
igw08t120 rev2 6g.pdf
IGW08T120 TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
igw08t120.pdf
IGW08T120 TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
Datasheet: IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IKW30N60H3 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 .
Keywords - IGW08T120 transistor datasheet
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