AUIRGR4045D Specs and Replacement
Type Designator: AUIRGR4045D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 77 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 11 nS
Coesⓘ - Output Capacitance, typ: 29 pF
Package: DPAK
- IGBT ⓘ Cross-Reference Search
AUIRGR4045D datasheet
9.2. Size:325K international rectifier
auirgp4063d auirgp4063d-e.pdf 
AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the... See More ⇒
9.3. Size:316K international rectifier
auirgdc0250.pdf
AUTOMOTIVE GRADE AUIRGDC0250 Features C Low VCE (on) Planar IGBT Technology Low Switching Losses VCES = 1200V Square RBSOA 100% of The Parts Tested for ILM IC = 81A@ TC = 100 C Positive VCE (on) Temperature Coefficient. G Lead-Free, RoHS Compliant VCE(on) typ. = 1.37V@ 33A Automotive Qualified * E n-channel Benefits Device optimized for soft s... See More ⇒
9.4. Size:398K international rectifier
auirg4pc40s-e.pdf
AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G Standard Optimized for minimum saturation voltage E and low operating frequencies ( ... See More ⇒
9.5. Size:301K international rectifier
auirg4bc30s-s.pdf
AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (... See More ⇒
9.6. Size:305K international rectifier
auirgs30b60k.pdf
PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100 C 10 s Short Circuit Capability at TJ=175 C Square RBSOA G tsc > 10 s, TJ=150 C Positive VCE(on) Temperature Coefficient E Maximum Junction Temperature rated at 175 C VCE(on) typ.... See More ⇒
9.7. Size:582K international rectifier
auirgp65g40d0.pdf
AUIRGP65G40D0 AUTOMOTIVE GRADE AUIRGF65G40D0 ULTRAFAST IGBT WITH CooliRIGBT ULTRAFAST SOFT RECOVERY DIODE Features C Designed And Qualified for Automotive Applications VCES = 600V Ultra Fast Switching IGBT 70-200kHz VCE(on) typ. = 1.8V Extremely Low Switching Losses Maximum Junction Temperature 175 C G IC@TC=100 C = 41A Short Circuit Rated 5 S E ... See More ⇒
9.8. Size:314K international rectifier
auirgp4062d.pdf
PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses G tSC 5 s, TJ(max) = 175 C 5 s SCSOA Square RBSOA E VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM Positive VCE (on) Temperature Co... See More ⇒
9.9. Size:306K international rectifier
auirgps4067d1.pdf
PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 160A, TC = 100 C Low VCE (on) Trench IGBT Technology Low Switching Losses 6 s SCSOA G tSC 6 s, TJ(max) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(on) typ. = 1.70V Positive VCE (on) Tempera... See More ⇒
9.10. Size:280K international rectifier
auirg4ph50s.pdf
AUTOMOTIVE GRADE AUIRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features IC = 81A@ TC = 100 C Standard Optimized for minimum saturation G voltage and low operating frequencies (... See More ⇒
9.11. Size:621K international rectifier
auirgb4062d auirgp4062d auirgp4062d-e.pdf
PD - 96353 AUIRGB4062D AUIRGP4062D AUIRGP4062D-E C INSULATED GATE BIPOLAR TRANSISTOR WITH VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 24A, TC = 100 C Features Low VCE (on) Trench IGBT Technology G tSC 5 s, TJ(max) = 175 C Low Switching Losses 5 s SCSOA E Square RBSOA VCE(on) typ. = 1.60V 100% of The Parts Tested for ILM n-channel Positive V... See More ⇒
9.12. Size:356K international rectifier
auirgp50b60pd1.pdf
AUIRGP50B60PD1 AUTOMOTIVE GRADE AUIRGP50B60PD1-E WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Applications Automotive HEV and EV Equivalent MOSFET PFC and ZVS SMPS Circuits G Parameters Features RCE(on) typ. = 61m E Low VCE(ON) NPT Technology, Positive Temperature ID (FET equivalent) = 50A Coefficie... See More ⇒
9.13. Size:301K international rectifier
auirg4bc30s-s auirg4bc30s-sl.pdf
AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (... See More ⇒
9.14. Size:290K international rectifier
auirgp35b60pd.pdf
PD - 97675 AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 1.85V Features @ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Equivalent MOSFET Lower Parasitic Capacitances G Minimal Tail Current Parameters HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode RCE(on)... See More ⇒
9.15. Size:324K international rectifier
auirg4bc30u-s.pdf
PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant ... See More ⇒
9.16. Size:415K international rectifier
auirgs4062d1.pdf
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.... See More ⇒
9.17. Size:432K international rectifier
auirgp4062d1.pdf
AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. E VCE(on) ty... See More ⇒
9.18. Size:976K international rectifier
auirgp66524d0.pdf
AUIRGP66524D0 AUIRGF66524D0 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH COOLiRIGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V INOMINAL = 24A E Tsc 6 s, TJ(MAX) = 175 C G C E G C G E VCE(ON) typ. = 1.60V TO-247AC TO-247AD n-channel AUIRGP66524D0 AUIRGF66524D0 Applications G C E Air Conditioning Compressor Gate Collector E... See More ⇒
9.19. Size:396K international rectifier
auirgp35b60pd-e.pdf
PD - 97619 AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 1.85V Features @ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Equivalent MOSFET Lower Parasitic Capacitances G Parameters Minimal Tail Current RCE(on) typ. = 84m HEXFRED Ultra Fast Soft-Recov... See More ⇒
9.20. Size:363K international rectifier
auirgp4066d1.pdf
AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching losses G tSC 5 s, TJ(max) = 175 C Maximum Junction temperature 175 C 5 S short circuit SOA E VCE(on) typ. = 1.70V Square RBSOA n-channel 100... See More ⇒
9.21. Size:305K international rectifier
auirgsl30b60k.pdf
PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100 C 10 s Short Circuit Capability at TJ=175 C Square RBSOA G tsc > 10 s, TJ=150 C Positive VCE(on) Temperature Coefficient E Maximum Junction Temperature rated at 175 C VCE(on) typ.... See More ⇒
9.22. Size:415K international rectifier
auirgsl4062d1.pdf
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.... See More ⇒
9.23. Size:415K international rectifier
auirgb4062d1.pdf
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.... See More ⇒
9.24. Size:337K international rectifier
auirgp4063d.pdf
AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the... See More ⇒
9.25. Size:879K infineon
auirgps4070d0.pdf
AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100 C 6 s SCSOA G tsc 6 s, TJ(MAX) = 175 C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V ... See More ⇒
9.27. Size:432K infineon
auirgdc0250.pdf
AUTOMOTIVE GRADE AUIRGDC0250 Features C Low VCE (on) Planar IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 81A @ TC = 100 C G 100% of the Parts Tested for ILM VCE(on) typ. = 1.47V @ 33A Positive VCE (on) Temperature Coefficient E n-channel Reflow Capable per JDSD22-A113 Lead-Free, RoHS Compliant Automotive Qualifi... See More ⇒
Specs: AUIRGB4062D
, AUIRGP35B60PD
, AUIRGP35B60PD-E
, AUIRGP4062D
, AUIRGP4063D
, AUIRGP4066D1
, AUIRGP50B60PD1
, AUIRGPS4067D1
, STGW60V60DF
, SIW50N65G2H2G
, AUIRGS30B60K
, SIW50N65G2L2G
, SIW75N65G2H2A
, AUIRGSL30B60K
, AUIRGU4045D
, IRG4BC10SD-L
, IRG4BC10SD-S
.
Keywords - AUIRGR4045D transistor spec
AUIRGR4045D cross reference
AUIRGR4045D equivalent finder
AUIRGR4045D lookup
AUIRGR4045D substitution
AUIRGR4045D replacement
