IRG4BC40WS IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4BC40WS
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 160 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Qgⓘ - Total Gate Charge, typ: 98 nC
Package: D2PAK
IRG4BC40WS Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4BC40WS Datasheet (PDF)
irg4bc40ws.pdf
PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG
irg4bc40wl.pdf
PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG
irg4bc40w.pdf
PD - 91654AIRG4BC40WINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC
irg4bc40s.pdf
PD - 91455BIRG4BC40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
irg4bc40u.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation
irg4bc40k.pdf
D I Short Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Gen
irg4bc40f.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VG
irg4bc40u.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation
Datasheet: IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , TGAN40N60FD , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD , IRG4PC60F .
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