IRG4IBC30S Datasheet. Specs and Replacement

Type Designator: IRG4IBC30S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 45 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 23.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 72 pF

Package: TO220F

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IRG4IBC30S datasheet

 ..1. Size:129K  international rectifier
 irg4ibc30s.pdf pdf_icon

IRG4IBC30S

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating freqencies (... See More ⇒

 5.1. Size:198K  international rectifier
 irg4ibc30kd.pdf pdf_icon

IRG4IBC30S

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V para... See More ⇒

 5.2. Size:223K  international rectifier
 irg4ibc30fd.pdf pdf_icon

IRG4IBC30S

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.59V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi... See More ⇒

 5.3. Size:163K  international rectifier
 irg4ibc30w.pdf pdf_icon

IRG4IBC30S

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12... See More ⇒

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Specs: IRG4BC30FD-S, IRG4BC30S-S, IRG4BC30U-S, IRG4BC40WL, IRG4BC40WS, IRG4BH20K-L, IRG4BH20K-S, IRG4IBC10UD, MBQ60T65PES, IRG4PC20U, IRG4PC50F-E, IRG4PC50SD, IRG4PC60F, IRG4PC60U-P, IRG4PH40UD2-E, IRG4PH50S-E, IRG4PSH71U

Keywords - IRG4IBC30S transistor spec

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