All IGBT. IRG4PC50F-E Datasheet

 

IRG4PC50F-E IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PC50F-E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: TO247

 IRG4PC50F-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PC50F-E Datasheet (PDF)

 ..1. Size:323K  international rectifier
 irg4pc50f-e.pdf

IRG4PC50F-E IRG4PC50F-E

PD - 96168IRG4PC50F-EPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standar

 5.1. Size:214K  international rectifier
 irg4pc50fd.pdf

IRG4PC50F-E IRG4PC50F-E

PD 91469BIRG4PC50FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighterG parameter distribution and high

 5.2. Size:152K  international rectifier
 irg4pc50f.pdf

IRG4PC50F-E IRG4PC50F-E

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V,

 5.3. Size:310K  infineon
 irg4pc50fpbf.pdf

IRG4PC50F-E IRG4PC50F-E

PD - 95398IRG4PC50FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.45VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 39AE Industry standard

Datasheet: IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , FGH40N60SFD , IRG4PC50SD , IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F .

 

 
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