All IGBT. GT50J301 Datasheet

 

GT50J301 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT50J301
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Package: TO264

 GT50J301 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT50J301 Datasheet (PDF)

 ..1. Size:439K  toshiba
gt50j301.pdf

GT50J301 GT50J301

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA

 8.1. Size:226K  toshiba
gt50j328.pdf

GT50J301 GT50J301

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter volt

 8.2. Size:198K  toshiba
gt50j325.pdf

GT50J301 GT50J301

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

 8.3. Size:615K  toshiba
gt50j322.pdf

GT50J301 GT50J301

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25

 8.4. Size:244K  toshiba
gt50j341.pdf

GT50J301 GT50J301

GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancemen

Datasheet: GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , YGW60N65F1A1 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 .

 

 
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