All IGBT. IRG7IA13U Datasheet

 

IRG7IA13U IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG7IA13U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 34 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.26 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 47 pF
   Qgⓘ - Total Gate Charge, typ: 33 nC
   Package: TO220F

 IRG7IA13U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7IA13U Datasheet (PDF)

 ..1. Size:171K  international rectifier
 irg7ia13u.pdf

IRG7IA13U IRG7IA13U

PD - 97636AIRG7IA13UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25Ccircuits in PDP applications 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

 7.1. Size:287K  international rectifier
 irg7ia19u.pdf

IRG7IA13U IRG7IA13U

PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea

 9.1. Size:298K  international rectifier
 irg7ic30fd.pdf

IRG7IA13U IRG7IA13U

IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance

 9.2. Size:203K  international rectifier
 irg7i313u.pdf

IRG7IA13U IRG7IA13U

PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

 9.3. Size:282K  international rectifier
 irg7ic28u.pdf

IRG7IA13U IRG7IA13U

PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

 9.4. Size:297K  international rectifier
 irg7i319u.pdf

IRG7IA13U IRG7IA13U

PD -96273PDP TRENCH IGBTIRG7I319UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25C170 Acircuits in PDP applicationsTJ max150 Cl Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiencyl High repetitive peak current capabilityCl

Datasheet: IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , YGW60N65F1A1 , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U .

 

 
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