All IGBT. IRG7IA19U Datasheet

 

IRG7IA19U Datasheet and Replacement


   Type Designator: IRG7IA19U
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 35 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.26 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 57 pF
   Qg ⓘ - Total Gate Charge, typ: 38 nC
   Package: TO220F
 

 IRG7IA19U substitution

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IRG7IA19U Datasheet (PDF)

 ..1. Size:287K  international rectifier
 irg7ia19u.pdf pdf_icon

IRG7IA19U

PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea

 7.1. Size:171K  international rectifier
 irg7ia13u.pdf pdf_icon

IRG7IA19U

PD - 97636AIRG7IA13UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25Ccircuits in PDP applications 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

 9.1. Size:298K  international rectifier
 irg7ic30fd.pdf pdf_icon

IRG7IA19U

IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance

 9.2. Size:203K  international rectifier
 irg7i313u.pdf pdf_icon

IRG7IA19U

PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

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Datasheet: IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , RJP63F3DPP-M0 , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD .

History: HGTG20N60B3D

Keywords - IRG7IA19U transistor datasheet

 IRG7IA19U cross reference
 IRG7IA19U equivalent finder
 IRG7IA19U lookup
 IRG7IA19U substitution
 IRG7IA19U replacement

 

 
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