All IGBT. IRG7P313U Datasheet

 

IRG7P313U IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7P313U

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 89

Maximum Collector-Emitter Voltage |Vce|, V: 330

Maximum Collector Current |Ic| @25℃, A: 40

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45

Package: TO247

IRG7P313U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7P313U Datasheet (PDF)

 9.1. Size:435K  international rectifier
irg7ph42ud-ep.pdf

IRG7P313U
IRG7P313U

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 9.2. Size:326K  international rectifier
irg7ph35ud1.pdf

IRG7P313U
IRG7P313U

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 9.3. Size:331K  international rectifier
irg7ph42ud1.pdf

IRG7P313U
IRG7P313U

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL

 9.4. Size:539K  international rectifier
irg7pk35ud1.pdf

IRG7P313U
IRG7P313U

IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V CIC = 20A, TC =100C TJ(max) = 150C GE E C G C G VCE(ON) typ. = 2.0V @ IC = 20A EIRG7PK35UD1PbFIRG7PK35UD1EPbFn-channelTO247ACTO247ADApplications Induction heating G C E Microwave ovens Gate Colle

 9.5. Size:361K  international rectifier
irg7ph50u.pdf

IRG7P313U
IRG7P313U

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

 9.6. Size:894K  international rectifier
irg7ph44k10d.pdf

IRG7P313U
IRG7P313U

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100C tSC 10s, TJ(max) = 150C GE C E G C G EVCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbFIRG7PH44K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E

 9.7. Size:388K  international rectifier
irg7psh73k10.pdf

IRG7P313U
IRG7P313U

PD - 97406AIRG7PSH73K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching LossesIC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOAGtSC 10s, TJ(max) =175C Square RBSOA 100% of The Parts Tested for ILMEVCE(on) typ. = 2.0V Positive VCE (ON) Temperatur

 9.8. Size:297K  international rectifier
irg7ph46u.pdf

IRG7P313U
IRG7P313U

PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

 9.9. Size:399K  international rectifier
irg7ph28ud1.pdf

IRG7P313U
IRG7P313U

IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS CVCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100C Low switching losses TJ(MAX) = 150C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv

 9.10. Size:561K  international rectifier
irg7ph50k10d.pdf

IRG7P313U
IRG7P313U

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter So

 9.11. Size:283K  international rectifier
irg7ph42ud1m.pdf

IRG7P313U
IRG7P313U

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

 9.12. Size:351K  international rectifier
irg7ph46ud-e.pdf

IRG7P313U
IRG7P313U

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

 9.13. Size:565K  international rectifier
irg7pg42ud.pdf

IRG7P313U
IRG7P313U

IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR CVCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 45A, TC = 100C Low switching losses G Square RBSOA TJ(MAX) = 150C 100% of the parts tested for ILM EVCE(ON) typ. = 1.7V @ IC = 30A Positive VCE (ON) temperature co-efficient n-channel Ultra

 9.14. Size:374K  international rectifier
irg7ph35u.pdf

IRG7P313U
IRG7P313U

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

 9.15. Size:321K  international rectifier
irg7ph30k10.pdf

IRG7P313U
IRG7P313U

PD - 96156AIRG7PH30K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low Switching Losses Maximum Junction Temperature 175 CIC = 23A, TC = 100C 10 S short Circuit SOA Square RBSOA GtSC 10s, TJ(max) =175C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-EfficientVC

 9.16. Size:374K  international rectifier
irg7ph35u-ep.pdf

IRG7P313U
IRG7P313U

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

 9.17. Size:441K  international rectifier
irg7pg35u.pdf

IRG7P313U
IRG7P313U

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR CVCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 35A, TC = 100C Low switching losses GTJ(MAX) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(ON) typ. = 1.9V@ IC = 20A Positive VCE (ON) temperature co-efficient n-channel Tight par

 9.18. Size:300K  international rectifier
irg7ph35ud1m.pdf

IRG7P313U
IRG7P313U

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM

 9.19. Size:351K  international rectifier
irg7ph46ud.pdf

IRG7P313U
IRG7P313U

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

 9.20. Size:299K  international rectifier
irg7ph42u-ep.pdf

IRG7P313U
IRG7P313U

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

 9.21. Size:764K  international rectifier
irg7psh54k10d.pdf

IRG7P313U
IRG7P313U

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100C tSC 10s, TJ(max) = 150C E GC VCE(ON) typ. = 1.9V @ IC = 50A G En-channelIRG7PSH54K10DPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC

 9.22. Size:461K  international rectifier
irg7ph35ud.pdf

IRG7P313U
IRG7P313U

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

 9.23. Size:265K  international rectifier
irg7pa19u.pdf

IRG7P313U
IRG7P313U

PD-96357PDP TRENCH IGBTIRG7PA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C300 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea

 9.24. Size:326K  international rectifier
irg7ph35ud1-ep.pdf

IRG7P313U
IRG7P313U

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 9.25. Size:653K  international rectifier
irg7ph37k10d.pdf

IRG7P313U
IRG7P313U

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E GC C G G EVCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbFIRG7PH37K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collecto

 9.26. Size:435K  international rectifier
irg7ph42ud.pdf

IRG7P313U
IRG7P313U

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 9.27. Size:299K  international rectifier
irg7ph42u.pdf

IRG7P313U
IRG7P313U

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

 9.28. Size:361K  international rectifier
irg7ph50u-e.pdf

IRG7P313U
IRG7P313U

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

 9.29. Size:384K  international rectifier
irg7psh50ud.pdf

IRG7P313U
IRG7P313U

PD - 97548IRG7PSH50UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight paramete

 9.30. Size:437K  international rectifier
irg7ph30k10d.pdf

IRG7P313U
IRG7P313U

PD - 97403IRG7PH30K10DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low switching losses 10 S short circuit SOAIC = 16A, TC = 100C Square RBSOA 100% of the parts tested for ILM G tSC 10s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficient Ultra

 9.31. Size:1498K  infineon
irg7ph42udpbf.pdf

IRG7P313U
IRG7P313U

 9.32. Size:462K  infineon
irg7ph35udpbf irg7ph35ud-ep.pdf

IRG7P313U
IRG7P313U

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

Datasheet: IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , RJH30E2DPP , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U .

 

 
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