GT50J322 Specs and Replacement
Type Designator: GT50J322
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: TO264
GT50J322 Substitution - IGBT ⓘ Cross-Reference Search
GT50J322 datasheet
gt50j322.pdf
GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed tf = 0.25 s (Typ.) (IC = 50A) Low saturation voltage VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25... See More ⇒
gt50j328.pdf
GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit mm Fourth Generation IGBT Enhancement mode type High speed tf = 0.1 s (Typ.) Low saturation voltage VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter volt... See More ⇒
gt50j325.pdf
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit mm Fast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.30 mJ (typ.) Eoff = 1.34 mJ... See More ⇒
gt50j301.pdf
GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHA... See More ⇒
Specs: GT40M101, GT40M301, GT40T301, GT50G101, GT50G102, GT50J101, GT50J102, GT50J301, IRG7R313U, GT50L101, GT50M101, GT50Q101, GT50S101, GT50T101, GT5G101, GT5G102, GT5G102LB
Keywords - GT50J322 transistor spec
GT50J322 cross reference
GT50J322 equivalent finder
GT50J322 lookup
GT50J322 substitution
GT50J322 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116