All IGBT. IRG7PH35U Datasheet

 

IRG7PH35U IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH35U

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 210

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic| @25℃, A: 55

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2

Package: TO247

IRG7PH35U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH35U Datasheet (PDF)

 ..1. Size:374K  international rectifier
irg7ph35u.pdf

IRG7PH35U
IRG7PH35U

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

 0.1. Size:326K  international rectifier
irg7ph35ud1.pdf

IRG7PH35U
IRG7PH35U

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 0.2. Size:374K  international rectifier
irg7ph35u-ep.pdf

IRG7PH35U
IRG7PH35U

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

 0.3. Size:300K  international rectifier
irg7ph35ud1m.pdf

IRG7PH35U
IRG7PH35U

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM

 0.4. Size:461K  international rectifier
irg7ph35ud.pdf

IRG7PH35U
IRG7PH35U

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

 0.5. Size:326K  international rectifier
irg7ph35ud1-ep.pdf

IRG7PH35U
IRG7PH35U

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 0.6. Size:462K  infineon
irg7ph35udpbf irg7ph35ud-ep.pdf

IRG7PH35U
IRG7PH35U

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

Datasheet: IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , DG40F12T2 , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U .

 

 
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