IRG7PH42UD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH42UD1

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 313

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic| @25℃, A: 85

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2

Package: TO247

IRG7PH42UD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG7PH42UD1 Datasheet (PDF)

..1. Size:331K international rectifier
irg7ph42ud1.pdf

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL

0.1. Size:283K international rectifier
irg7ph42ud1m.pdf

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

4.1. Size:435K international rectifier
irg7ph42ud-ep.pdf

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

4.2. Size:435K international rectifier
irg7ph42ud.pdf