All IGBT. IRG7PH42UD1 Datasheet

 

IRG7PH42UD1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG7PH42UD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 313
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 85
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Collector Capacity (Cc), typ, pF: 130
   Total Gate Charge (Qg), typ, nC: 180
   Package: TO247

 IRG7PH42UD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH42UD1 Datasheet (PDF)

 ..1. Size:331K  international rectifier
irg7ph42ud1.pdf

IRG7PH42UD1
IRG7PH42UD1

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL

 0.1. Size:283K  international rectifier
irg7ph42ud1m.pdf

IRG7PH42UD1
IRG7PH42UD1

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

 4.1. Size:435K  international rectifier
irg7ph42ud-ep.pdf

IRG7PH42UD1
IRG7PH42UD1

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 4.2. Size:435K  international rectifier
irg7ph42ud.pdf

IRG7PH42UD1
IRG7PH42UD1

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 4.3. Size:1498K  infineon
irg7ph42udpbf.pdf

IRG7PH42UD1
IRG7PH42UD1

Datasheet: IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , STGB10NB37LZ , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-EP , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U .

 

 
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