All IGBT. IRG7PH46UD Datasheet

 

IRG7PH46UD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH46UD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 390

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Collector Current |Ic|, A: 108

Package: TO247

IRG7PH46UD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH46UD Datasheet (PDF)

0.1. irg7ph46ud-e.pdf Size:351K _international_rectifier

IRG7PH46UD
IRG7PH46UD

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

0.2. irg7ph46ud.pdf Size:351K _international_rectifier

IRG7PH46UD
IRG7PH46UD

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

 5.1. irg7ph46u.pdf Size:297K _international_rectifier

IRG7PH46UD
IRG7PH46UD

PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

Datasheet: IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IXGR32N60CD1 , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F .

 

 
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