All IGBT. IRG7PH46UD Datasheet

 

IRG7PH46UD IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG7PH46UD
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 390
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 108
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 40
   Collector Capacity (Cc), typ, pF: 150
   Package: TO247

 IRG7PH46UD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH46UD Datasheet (PDF)

 ..1. Size:351K  international rectifier
irg7ph46ud.pdf

IRG7PH46UD
IRG7PH46UD

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

 0.1. Size:351K  international rectifier
irg7ph46ud-e.pdf

IRG7PH46UD
IRG7PH46UD

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

 5.1. Size:297K  international rectifier
irg7ph46u.pdf

IRG7PH46UD
IRG7PH46UD

PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

 7.1. Size:299K  international rectifier
irg7ph42u-ep.pdf

IRG7PH46UD
IRG7PH46UD

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

 7.2. Size:435K  international rectifier
irg7ph42ud-ep.pdf

IRG7PH46UD
IRG7PH46UD

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 7.3. Size:299K  international rectifier
irg7ph42u.pdf

IRG7PH46UD
IRG7PH46UD

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

 7.4. Size:894K  international rectifier
irg7ph44k10d.pdf

IRG7PH46UD
IRG7PH46UD

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100C tSC 10s, TJ(max) = 150C GE C E G C G EVCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbFIRG7PH44K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E

 7.5. Size:283K  international rectifier
irg7ph42ud1m.pdf

IRG7PH46UD
IRG7PH46UD

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

 7.6. Size:435K  international rectifier
irg7ph42ud.pdf

IRG7PH46UD
IRG7PH46UD

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 7.7. Size:331K  international rectifier
irg7ph42ud1.pdf

IRG7PH46UD
IRG7PH46UD

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL

 7.8. Size:1498K  infineon
irg7ph42udpbf.pdf

IRG7PH46UD
IRG7PH46UD

Datasheet: IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , YGW60N65F1A1 , IRG7PH50U , IRG7PH50U-EP , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F .

 

 
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