All IGBT. IRG7PH50U-E Datasheet

 

IRG7PH50U-E IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH50U-E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 556

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Collector Current |Ic|, A: 140

Package: TO247AD

IRG7PH50U-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH50U-E Datasheet (PDF)

..1. irg7ph50u-e.pdf Size:361K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

5.1. irg7ph50u.pdf Size:361K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

6.1. irg7ph50k10d.pdf Size:561K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter So

 8.1. irg7ph42ud-ep.pdf Size:435K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

8.2. irg7ph35ud1.pdf Size:326K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

 8.3. irg7ph42ud1.pdf Size:331K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL

8.4. irg7ph44k10d.pdf Size:894K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100C tSC 10s, TJ(max) = 150C GE C E G C G EVCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbFIRG7PH44K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector E

 8.5. irg7ph46u.pdf Size:297K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 96305AIRG7PH46UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH46U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 75A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

8.6. irg7ph28ud1.pdf Size:399K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS CVCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100C Low switching losses TJ(MAX) = 150C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv

8.7. irg7ph42ud1m.pdf Size:283K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

8.8. irg7ph46ud-e.pdf Size:351K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

8.9. irg7ph35u.pdf Size:374K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

8.10. irg7ph30k10.pdf Size:321K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 96156AIRG7PH30K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low Switching Losses Maximum Junction Temperature 175 CIC = 23A, TC = 100C 10 S short Circuit SOA Square RBSOA GtSC 10s, TJ(max) =175C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-EfficientVC

8.11. irg7ph35u-ep.pdf Size:374K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)

8.12. irg7ph35ud1m.pdf Size:300K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM

8.13. irg7ph46ud.pdf Size:351K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH46UDPbFIRG7PH46UD-EPINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight parame

8.14. irg7ph42u-ep.pdf Size:299K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

8.15. irg7ph35ud.pdf Size:461K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T

8.16. irg7ph35ud1-ep.pdf Size:326K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I

8.17. irg7ph37k10d.pdf Size:653K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100C E tSC 10s, TJ(max) = 150C E GC C G G EVCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbFIRG7PH37K10DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collecto

8.18. irg7ph42ud.pdf Size:435K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

8.19. irg7ph42u.pdf Size:299K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

8.20. irg7ph30k10d.pdf Size:437K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97403IRG7PH30K10DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 1200V Low switching losses 10 S short circuit SOAIC = 16A, TC = 100C Square RBSOA 100% of the parts tested for ILM G tSC 10s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficient Ultra

Datasheet: IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , SGH80N60UFD , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD .

 

 
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