IRG7PH50U-EP Datasheet. Specs and Replacement
Type Designator: IRG7PH50U-EP 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 556 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 140 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Package: TO247
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IRG7PH50U-EP datasheet
irg7ph50u-e.pdf
PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE... See More ⇒
irg7ph50u.pdf
PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE... See More ⇒
irg7ph50k10d.pdf
IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100 C tSC 10 s, TJ(max) = 150 C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF IRG7PH50K10D EPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter So... See More ⇒
Specs: IRG7PH35UD, IRG7PH35UD1, IRG7PH42U, IRG7PH42UD, IRG7PH42UD1, IRG7PH46U, IRG7PH46UD, IRG7PH50U, RJP63F3DPP-M0, IRG7PSH50UD, IRG7PSH73K10, IRG7R313U, IRG7S313U, IRG7S319U, IRG7SC12F, IRG7SC28U, IRGB10B60KD
Keywords - IRG7PH50U-EP transistor spec
IRG7PH50U-EP cross reference
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