IRG7PH50U-EP IGBT. Datasheet pdf. Equivalent
Type Designator: IRG7PH50U-EP
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 556 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 140 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Qgⓘ - Total Gate Charge, typ: 290 nC
Package: TO247
IRG7PH50U-EP Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG7PH50U-EP Datasheet (PDF)
irg7ph50u-e.pdf
PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE
irg7ph50u.pdf
PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE
irg7ph50k10d.pdf
IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter So
Datasheet: IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , SGT40N60FD2PN , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD .
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