All IGBT. IRG7PH50U-E Datasheet

 

IRG7PH50U-E IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH50U-E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 556

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Collector Current |Ic|, A: 140

Package: TO247AD

IRG7PH50U-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH50U-E Datasheet (PDF)

0.1. irg7ph50u-e.pdf Size:361K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

5.1. irg7ph50u.pdf Size:361K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

PD - 97549IRG7PH50UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH50U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 90A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVCE

 6.1. irg7ph50k10d.pdf Size:561K _international_rectifier

IRG7PH50U-E
IRG7PH50U-E

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100C tSC 10s, TJ(max) = 150C GC E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channelIRG7PH50K10DPbFIRG7PH50K10DEPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter So

Datasheet: IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , HGTG30N60A4D , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD .

 

 
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