IRG7PH50U-EP Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRG7PH50U-EP Specs and Replacement

Type Designator: IRG7PH50U-EP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 556 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 190 pF

Package: TO247

IRG7PH50U-EP Substitution

- IGBT ⓘ Cross-Reference Search

IRG7PH50U-EP datasheet

3.1. Size:361K international rectifier
irg7ph50u-e.pdf pdf_icon

PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE... See More ⇒

5.1. Size:361K international rectifier
irg7ph50u.pdf pdf_icon

6.1. Size:561K international rectifier
irg7ph50k10d.pdf pdf_icon

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100 C tSC 10 s, TJ(max) = 150 C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF IRG7PH50K10D EPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter So... See More ⇒

Specs: IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IKW50N60T , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD .