All IGBT. IRG7PSH50UD Datasheet

 

IRG7PSH50UD IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG7PSH50UD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 462 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 116 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: TO274AA
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IRG7PSH50UD Datasheet (PDF)

 ..1. Size:384K  international rectifier
irg7psh50ud.pdf pdf_icon

IRG7PSH50UD
IRG7PSH50UD

PD - 97548IRG7PSH50UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diode Tight paramete

 6.1. Size:764K  international rectifier
irg7psh54k10d.pdf pdf_icon

IRG7PSH50UD
IRG7PSH50UD

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100C tSC 10s, TJ(max) = 150C E GC VCE(ON) typ. = 1.9V @ IC = 50A G En-channelIRG7PSH54K10DPbFApplications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC

 7.1. Size:388K  international rectifier
irg7psh73k10.pdf pdf_icon

IRG7PSH50UD
IRG7PSH50UD

PD - 97406AIRG7PSH73K10PbFINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching LossesIC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOAGtSC 10s, TJ(max) =175C Square RBSOA 100% of The Parts Tested for ILMEVCE(on) typ. = 2.0V Positive VCE (ON) Temperatur

 9.1. Size:299K  international rectifier
irg7ph42u-ep.pdf pdf_icon

IRG7PSH50UD
IRG7PSH50UD

PD - 96233BIRG7PH42UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH42U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CIC = 60A, TC = 100C Square RBSOA 100% of the parts tested for ILM GTJ(max) =175C Positive VCE (ON) temperature co-efficientE Tight parameter distributionVC

Datasheet: IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-EP , RJH3047 , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L .

 

 
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